APT45GR65B

IGBT Transistors IGBT MOS 8 650 V 45 A TO-247

SKU: APT45GR65B

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R 127.64

R 109.87

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IGBT Transistors IGBT MOS 8 650 V 45 A TO-247

Products specifications

Mounting Style	Through Hole
Packaging	Tube
Continuous Collector Current at 25 C	118 A
Collector- Emitter Voltage VCEO Max	650 V
Technology	Si
Configuration	Single
Pd - Power Dissipation	543 W
Maximum Gate Emitter Voltage	30 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Collector-Emitter Saturation Voltage	1.9 V

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Products specifications

Mounting Style	Through Hole
Packaging	Tube
Continuous Collector Current at 25 C	118 A
Collector- Emitter Voltage VCEO Max	650 V
Technology	Si
Configuration	Single
Pd - Power Dissipation	543 W
Maximum Gate Emitter Voltage	30 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Collector-Emitter Saturation Voltage	1.9 V