IGBTs IGBT PT MOS 7 Combi 1200 V 45 A TO-247 MAX
Lead Time: 40 Days
Products specifications
Pd - Power Dissipation | 625 W |
Technology | Si |
Configuration | Single |
Maximum Gate Emitter Voltage | 30 V |
Minimum Operating Temperature | - 55 C |
Collector-Emitter Saturation Voltage | 3.3 V |
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Mounting Style | Through Hole |
Continuous Collector Current at 25 C | 113 A |