IGBTs IGBT PT MOS 8 Combi 900 V 43 A TO-247
Products specifications
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Maximum Gate Emitter Voltage | 30 V |
Collector-Emitter Saturation Voltage | 2.5 V |
Pd - Power Dissipation | 337 W |
Configuration | Single |
Mounting Style | Through Hole |
Collector- Emitter Voltage VCEO Max | 900 V |
Continuous Collector Current at 25 C | 78 A |
Minimum Operating Temperature | - 55 C |
Technology | Si |