IGBTs IGBT MOS 8 1200 V 40 A TO-247 MAX
Lead Time: 0 Days
Products specifications
Configuration | Single |
Pd - Power Dissipation | 500 W |
Maximum Operating Temperature | + 150 C |
Collector-Emitter Saturation Voltage | 2.5 V |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Maximum Gate Emitter Voltage | 30 V |
Technology | Si |
Continuous Collector Current at 25 C | 88 A |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Mounting Style | Through Hole |