IGBT Modules PM-IGBT-TFS-SBD-SOT227
Products specifications
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 2.05 V |
Continuous Collector Current at 25 C | 80 A |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Packaging | Tube |
Gate-Emitter Leakage Current | 120 nA |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 312 W |