IGBT Modules PM-IGBT-TFS-SOT227
Products specifications
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Collector-Emitter Saturation Voltage | 1.85 V |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Gate-Emitter Leakage Current | 400 nA |
Maximum Operating Temperature | + 175 C |
Packaging | Tube |
Pd - Power Dissipation | 220 W |
Product | IGBT Silicon Modules |
Continuous Collector Current at 25 C | 65 A |