IGBT Modules PM-IGBT-TFS-SOT227
Products specifications
Collector-Emitter Saturation Voltage | 1.7 V |
Gate-Emitter Leakage Current | 500 nA |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Packaging | Tube |
Continuous Collector Current at 25 C | 55 A |
Product | IGBT Silicon Modules |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 260 W |
Configuration | Single |