IGBT Modules PM-IGBT-TFS-SBD-SOT227
Products specifications
Pd - Power Dissipation | 170 W |
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Continuous Collector Current at 25 C | 45 A |
Maximum Operating Temperature | + 175 C |
Gate-Emitter Leakage Current | 400 nA |
Configuration | Single |
Collector-Emitter Saturation Voltage | 2.05 V |
Product | IGBT Silicon Modules |