IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 15 A TO-247
Lead Time: 0 Days
Products specifications
Mounting Style | Through Hole |
Pd - Power Dissipation | 250 W |
Technology | Si |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Continuous Collector Current at 25 C | 36 A |
Maximum Operating Temperature | + 150 C |
Collector-Emitter Saturation Voltage | 3.2 V |
Packaging | Tube |
Maximum Gate Emitter Voltage | 30 V |