IGBT Modules IGBT NPT Medium Frequency Single 1200 V 150 A SOT-227
Products specifications
Pd - Power Dissipation | 830 W |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Continuous Collector Current at 25 C | 170 A |
Product | IGBT Silicon Modules |
Gate-Emitter Leakage Current | 900 nA |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 3.2 V |