JFETs 1200V/70mO,SIC,JFET,G3,TO247-3
Lead Time: 266 Days
Products specifications
Id - Continuous Drain Current | 33.5 A |
Rds On - Drain-Source Resistance | 70 mOhms |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 1200 V |
Pd - Power Dissipation | 254 W |
Technology | SiC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Mounting Style | Through Hole |
Configuration | Single |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Breakdown Voltage | 20 V |