JFETs 1200V/35mO,SIC,JFET,G3,TO247-3
Lead Time: 266 Days
Products specifications
Pd - Power Dissipation | 429 W |
Id - Continuous Drain Current | 63 A |
Vds - Drain-Source Breakdown Voltage | 1200 V |
Technology | SiC |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 35 mOhms |
Configuration | Single |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Maximum Operating Temperature | + 175 C |
Packaging | Tube |