JFETs 650V/80mO,SIC,JFET,G3,TO247-3
Lead Time: 266 Days
Products specifications
Maximum Operating Temperature | + 175 C |
Vds - Drain-Source Breakdown Voltage | 650 V |
Rds On - Drain-Source Resistance | 80 mOhms |
Id - Continuous Drain Current | 32 A |
Technology | SiC |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 190 W |
Configuration | Single |
Mounting Style | Through Hole |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Breakdown Voltage | 20 V |