JFETs 650V/25mO,SIC,JFET,G3,TO247-3
Lead Time: 266 Days
Products specifications
Technology | SiC |
Rds On - Drain-Source Resistance | 25 mOhms |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 441 W |
Vgs - Gate-Source Breakdown Voltage | - 20 V to 20 V |
Id - Continuous Drain Current | 85 A |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 650 V |
Transistor Polarity | N-Channel |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |