UJ3C120150K3S

SiC MOSFETs 1200V/150mOhms,SICFET,G3,TO247-3
Lead Time: 266 Days

SKU: UJ3C120150K3S

Availability: 425 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

25+

100+

250+

600+

Price

R 250.34

R 220.83

R 191.58

R 162.06

R 153.37

Free shipping

SiC MOSFETs 1200V/150mOhms,SICFET,G3,TO247-3
Lead Time: 266 Days

Products specifications

Configuration	Single
Technology	SiC
Rds On - Drain-Source Resistance	180 mOhms
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	3.5 V
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	1.2 kV
Channel Mode	Enhancement
Pd - Power Dissipation	166.7 W
Maximum Operating Temperature	+ 175 C
Id - Continuous Drain Current	18.4 A
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	30 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel

Your name *

Your email *

Enquiry *

Products specifications

Configuration	Single
Technology	SiC
Rds On - Drain-Source Resistance	180 mOhms
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	3.5 V
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	1.2 kV
Channel Mode	Enhancement
Pd - Power Dissipation	166.7 W
Maximum Operating Temperature	+ 175 C
Id - Continuous Drain Current	18.4 A
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	30 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel