SiC MOSFETs 1200V/80mOhms,SICFET,G3,TO247-3
Lead Time: 266 Days
Products specifications
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vgs - Gate-Source Voltage | 25 V |
Configuration | Single |
Technology | SiC |
Qg - Gate Charge | 51 nC |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 1.2 kV |
Id - Continuous Drain Current | 33 A |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Pd - Power Dissipation | 254.2 W |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 100 mOhms |