SiC MOSFETs 1200V/40mOhms,SICFET,G3,TO247-3
Lead Time: 266 Days
Products specifications
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 25 V |
Pd - Power Dissipation | 429 W |
Configuration | Single |
Rds On - Drain-Source Resistance | 45 mOhms |
Qg - Gate Charge | 51 nC |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 1.2 kV |
Maximum Operating Temperature | + 175 C |
Number of Channels | 1 Channel |
Technology | SiC |
Packaging | Tube |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 65 A |