SiC MOSFETs 650V/80mOhms,SICFET,G3,TO247-3
Lead Time: 266 Days
Products specifications
Technology | SiC |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Id - Continuous Drain Current | 31 A |
Vgs - Gate-Source Voltage | 25 V |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Qg - Gate Charge | 51 nC |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Configuration | Single |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 190 W |
Rds On - Drain-Source Resistance | 100 mOhms |