SiC MOSFETs 650V/80mOhms,SICFET,G3,TO263-3
Lead Time: 266 Days
Products specifications
Rds On - Drain-Source Resistance | 100 mOhms |
Technology | SiC |
Maximum Operating Temperature | + 175 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 115 W |
Vds - Drain-Source Breakdown Voltage | 650 V |
Configuration | Single |
Vgs - Gate-Source Voltage | 25 V |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 25 A |
Qg - Gate Charge | 51 nC |