SiC MOSFETs 650V/30mOhms,SICFET,G3,TO220-3
Lead Time: 266 Days
Products specifications
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Configuration | Single |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Maximum Operating Temperature | + 175 C |
Rds On - Drain-Source Resistance | 35 mOhms |
Vgs - Gate-Source Voltage | 25 V |
Pd - Power Dissipation | 441 W |
Qg - Gate Charge | 51 nC |
Technology | SiC |
Id - Continuous Drain Current | 85 A |
Packaging | Tube |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C |