UJ3C065030K3S

SiC MOSFETs 650V/30mOhms,SICFET,G3,TO247-3
Lead Time: 266 Days

SKU: UJ3C065030K3S

Availability: 1519 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

25+

100+

250+

600+

Price

R 565.51

R 463.53

R 431.38

R 383.95

R 380.26

Free shipping

SiC MOSFETs 650V/30mOhms,SICFET,G3,TO247-3
Lead Time: 266 Days

Products specifications

Packaging	Tube
Qg - Gate Charge	51 nC
Id - Continuous Drain Current	85 A
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	35 mOhms
Pd - Power Dissipation	441 W
Channel Mode	Enhancement
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	650 V
Technology	SiC

Your name *

Your email *

Enquiry *

Products specifications

Packaging	Tube
Qg - Gate Charge	51 nC
Id - Continuous Drain Current	85 A
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	35 mOhms
Pd - Power Dissipation	441 W
Channel Mode	Enhancement
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	650 V
Technology	SiC