UF3C120080K4S

SiC MOSFETs 1200V/80mO,SICFET,G3,TO247-4
Lead Time: 84 Days

SKU: UF3C120080K4S

Availability: 431 in stock

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Price

R 414.78

R 360.76

R 311.22

R 278.01

R 277.75

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SiC MOSFETs 1200V/80mO,SICFET,G3,TO247-4
Lead Time: 84 Days

Products specifications

Manufacturer	Linx Technologies
Product Category	RF Cable Assemblies
RoHS	Details
Connector A Series	U.FL
Connector A Gender	Plug (Female)
Connector A Body Style	Right Angle
Connector B Series	U.FL
Connector B Gender	Plug (Female)
Connector B Body Style	Right Angle
Length	100 mm
Impedance	50 Ohms
Maximum Frequency	3 GHz
Cable Type	1.13 mm Coax
Packaging	Bulk, Tube
Contact Plating	Gold
Brand	Linx Technologies
Contact Material	Brass
Connector A Polarity	Normal
Connector B Polarity	Normal
Minimum Frequency	DC
Polarity	Normal
Product Type	RF Cable Assemblies
Factory Pack Quantity	100
Subcategory	Cable Assemblies
Id - Continuous Drain Current	33 A
Vds - Drain-Source Breakdown Voltage	1200 V
Qg - Gate Charge	51 nC
Number of Channels	1 Channel
Channel Mode	Enhancement
Pd - Power Dissipation	254.2 W
Rds On - Drain-Source Resistance	100 mOhms
Configuration	Single
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	4 V
Technology	SiC

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Products specifications

Manufacturer	Linx Technologies
Product Category	RF Cable Assemblies
RoHS	Details
Connector A Series	U.FL
Connector A Gender	Plug (Female)
Connector A Body Style	Right Angle
Connector B Series	U.FL
Connector B Gender	Plug (Female)
Connector B Body Style	Right Angle
Length	100 mm
Impedance	50 Ohms
Maximum Frequency	3 GHz
Cable Type	1.13 mm Coax
Packaging	Bulk, Tube
Contact Plating	Gold
Brand	Linx Technologies
Contact Material	Brass
Connector A Polarity	Normal
Connector B Polarity	Normal
Minimum Frequency	DC
Polarity	Normal
Product Type	RF Cable Assemblies
Factory Pack Quantity	100
Subcategory	Cable Assemblies
Id - Continuous Drain Current	33 A
Vds - Drain-Source Breakdown Voltage	1200 V
Qg - Gate Charge	51 nC
Number of Channels	1 Channel
Channel Mode	Enhancement
Pd - Power Dissipation	254.2 W
Rds On - Drain-Source Resistance	100 mOhms
Configuration	Single
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	4 V
Technology	SiC