UF3C065040K4S

SiC MOSFETs 650V/40mO,SICFET,G3,TO247-4
Lead Time: 84 Days

SKU: UF3C065040K4S

Availability: 3350 in stock

Qty:

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Quantity

25+

100+

Price

R 380.79

R 330.72

R 285.39

Free shipping

SiC MOSFETs 650V/40mO,SICFET,G3,TO247-4
Lead Time: 84 Days

Products specifications

Manufacturer	Linx Technologies
Product Category	RF Cable Assemblies
RoHS	Details
Connector A Series	U.FL
Connector A Gender	Plug (Female)
Connector A Body Style	Right Angle
Connector B Series	U.FL
Connector B Gender	Plug (Female)
Connector B Body Style	Right Angle
Length	100 mm
Impedance	50 Ohms
Maximum Frequency	3 GHz
Cable Type	1.13 mm Coax
Packaging	Bulk, Tube
Contact Plating	Gold
Brand	Linx Technologies
Contact Material	Brass
Connector A Polarity	Normal
Connector B Polarity	Normal
Minimum Frequency	DC
Polarity	Normal
Product Type	RF Cable Assemblies
Factory Pack Quantity	100
Subcategory	Cable Assemblies
Maximum Operating Temperature	+ 175 C
Technology	SiC
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	326 W
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	54 A
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Channel Mode	Enhancement
Configuration	Single
Rds On - Drain-Source Resistance	52 Ohms
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	43 nC

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Products specifications

Manufacturer	Linx Technologies
Product Category	RF Cable Assemblies
RoHS	Details
Connector A Series	U.FL
Connector A Gender	Plug (Female)
Connector A Body Style	Right Angle
Connector B Series	U.FL
Connector B Gender	Plug (Female)
Connector B Body Style	Right Angle
Length	100 mm
Impedance	50 Ohms
Maximum Frequency	3 GHz
Cable Type	1.13 mm Coax
Packaging	Bulk, Tube
Contact Plating	Gold
Brand	Linx Technologies
Contact Material	Brass
Connector A Polarity	Normal
Connector B Polarity	Normal
Minimum Frequency	DC
Polarity	Normal
Product Type	RF Cable Assemblies
Factory Pack Quantity	100
Subcategory	Cable Assemblies
Maximum Operating Temperature	+ 175 C
Technology	SiC
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	326 W
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	54 A
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Channel Mode	Enhancement
Configuration	Single
Rds On - Drain-Source Resistance	52 Ohms
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	43 nC