JFETs JFET N-Channel -25V Low Noise
Products specifications
Technology | Si |
Vgs - Gate-Source Breakdown Voltage | - 25 V |
Mounting Style | Through Hole |
Configuration | Single |
Drain-Source Current at Vgs=0 | 60 mA |
Transistor Polarity | N-Channel |
Packaging | Bulk |
Pd - Power Dissipation | 300 mW |