JFETs JFET P-Channel 30V Low Noise
Products specifications
Rds On - Drain-Source Resistance | 250 Ohms |
Vds - Drain-Source Breakdown Voltage | - 15 V |
Technology | Si |
Drain-Source Current at Vgs=0 | - 35 mA |
Configuration | Single |
Packaging | Bulk |
Transistor Polarity | P-Channel |
Vgs - Gate-Source Breakdown Voltage | 30 V |