JFETs JFET P-Channel 30V Low Noise
Products specifications
Vgs - Gate-Source Breakdown Voltage | 30 V |
Transistor Polarity | P-Channel |
Packaging | Bulk |
Technology | Si |
Drain-Source Current at Vgs=0 | - 135 mA |
Vds - Drain-Source Breakdown Voltage | - 15 V |
Rds On - Drain-Source Resistance | 85 Ohms |
Configuration | Single |