JFETs JFET N-Channel -30V Low Noise
Products specifications
Rds On - Drain-Source Resistance | 60 Ohms |
Drain-Source Current at Vgs=0 | 80 mA |
Technology | Si |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Breakdown Voltage | - 30 V |
Packaging | Bulk |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 15 V |