JFETs JFET P-Channel 25V Low Noise
Products specifications
Technology | Si |
Transistor Polarity | P-Channel |
Packaging | Bulk |
Vgs - Gate-Source Breakdown Voltage | 25 V |
Rds On - Drain-Source Resistance | 150 Ohms |
Configuration | Single |
Drain-Source Current at Vgs=0 | - 10 mA |
Vds - Drain-Source Breakdown Voltage | - 10 V |