JFETs JFET P-Channel 30V Low Noise
Lead Time: 15 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | - 15 V |
Transistor Polarity | P-Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 75 Ohms |
Id - Continuous Drain Current | - 6 mA |
Configuration | Single |
Mounting Style | Through Hole |
Vgs - Gate-Source Breakdown Voltage | 30 V |
Pd - Power Dissipation | 360 mW |
Drain-Source Current at Vgs=0 | - 10 mA |
Packaging | Bulk |
Series | P108 |