JFETs JFET P-Channel 30V Low Noise
Products specifications
Pd - Power Dissipation | 360 mW |
Id - Continuous Drain Current | - 10 nA |
Rds On - Drain-Source Resistance | 250 Ohms |
Configuration | Single |
Transistor Polarity | P-Channel |
Vgs - Gate-Source Breakdown Voltage | 30 V |
Vds - Drain-Source Breakdown Voltage | - 15 V |
Drain-Source Current at Vgs=0 | - 35 mA |
Technology | Si |
Mounting Style | Through Hole |
Series | J176 |
Packaging | Bulk |