JFETs JFET N-Channel -25V Low Noise
Products specifications
Technology | Si |
Mounting Style | Through Hole |
Vgs - Gate-Source Breakdown Voltage | - 25 V |
Transistor Polarity | N-Channel |
Configuration | Single |
Drain-Source Current at Vgs=0 | 40 mA |
Rds On - Drain-Source Resistance | 12 Ohms |
Packaging | Bulk |
Pd - Power Dissipation | 360 mW |