JFETs JFET N-Channel -15V Low Ciss
Products specifications
Transistor Polarity | N-Channel |
Configuration | Single |
Vgs - Gate-Source Breakdown Voltage | - 15 V |
Technology | Si |
Rds On - Drain-Source Resistance | 3 kOhms |
Vds - Drain-Source Breakdown Voltage | 3.3 V |
Pd - Power Dissipation | 250 mW |
Drain-Source Current at Vgs=0 | 1 mA |
Id - Continuous Drain Current | 1 uA |
Packaging | Bulk |
Series | IFND89 |