IFN5566

JFETs JFET N-Channel(Dual) -40V Low Noise
Lead Time: 70 Days

SKU: IFN5566

Availability: 276 in stock

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R 747.79

R 664.31

R 624.73

R 580.84

R 502.21

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JFETs JFET N-Channel(Dual) -40V Low Noise
Lead Time: 70 Days

Products specifications

Pd - Power Dissipation	650 mW
Vgs - Gate-Source Breakdown Voltage	- 40 V
Rds On - Drain-Source Resistance	100 Ohms
Technology	Si
Drain-Source Current at Vgs=0	30 mA
Packaging	Bulk
Transistor Polarity	N-Channel
Configuration	Dual
Mounting Style	Through Hole

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Products specifications

Pd - Power Dissipation	650 mW
Vgs - Gate-Source Breakdown Voltage	- 40 V
Rds On - Drain-Source Resistance	100 Ohms
Technology	Si
Drain-Source Current at Vgs=0	30 mA
Packaging	Bulk
Transistor Polarity	N-Channel
Configuration	Dual
Mounting Style	Through Hole