JFETs JFET N-Channel(Dual) -40V Low Noise
Products specifications
Technology | Si |
Pd - Power Dissipation | 650 mW |
Vgs - Gate-Source Breakdown Voltage | - 40 V |
Configuration | Dual |
Transistor Polarity | N-Channel |
Drain-Source Current at Vgs=0 | 30 mA |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 100 Ohms |
Packaging | Bulk |