JFETs JFET N-Channel -25V Low Noise
Products specifications
Pd - Power Dissipation | 300 mW |
Rds On - Drain-Source Resistance | 5 Ohms |
Vgs - Gate-Source Breakdown Voltage | - 25 V |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Drain-Source Current at Vgs=0 | 150 mA |
Configuration | Single |
Packaging | Bulk |
Id - Continuous Drain Current | 10 mA |
Technology | Si |
Series | IFN543 |
Vds - Drain-Source Breakdown Voltage | 15 V |