JFET N-Ch -40V JFET -0.5 50mA 375mW -0.2Vgs
Products specifications
Technology | Si |
Drain-Source Current at Vgs=0 | 5 mA |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Pd - Power Dissipation | 375 mW |
Vgs - Gate-Source Breakdown Voltage | - 40 V |
Series | IFN411 |
Configuration | Dual |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 125 C |
Packaging | Bulk |