JFETs JFET N-Channel (Dual) -50V Low Ciss
Products specifications
Pd - Power Dissipation | 300 mW |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Breakdown Voltage | - 50 V |
Configuration | Dual |
Technology | Si |
Series | IFN40 |
Packaging | Bulk |
Drain-Source Current at Vgs=0 | 10 mA |
Id - Continuous Drain Current | 200 uA |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 15 V |