JFETs JFET P-Channel 25V Low Noise
Products specifications
Technology | Si |
Transistor Polarity | P-Channel |
Id - Continuous Drain Current | - 1 uA |
Series | IFN39 |
Vgs - Gate-Source Breakdown Voltage | 25 V |
Vds - Drain-Source Breakdown Voltage | - 10 V |
Packaging | Bulk |
Mounting Style | Through Hole |
Drain-Source Current at Vgs=0 | - 10 mA |
Pd - Power Dissipation | 300 mW |
Configuration | Single |