JFET JFET N-Channel -20V Low Noise
Products specifications
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Packaging | Bulk |
Vgs - Gate-Source Breakdown Voltage | - 20 V |
Pd - Power Dissipation | 300 mW |
Configuration | Single |
Drain-Source Current at Vgs=0 | 5 mA |
Technology | Si |