JFETs JFET N-Channel (Dual) -20V Low Noise
Products specifications
Technology | Si |
Vgs - Gate-Source Breakdown Voltage | - 20 V |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 300 mW |
Id - Continuous Drain Current | 500 pA |
Series | IF360 |
Mounting Style | Through Hole |
Configuration | Dual |
Packaging | Bulk |
Drain-Source Current at Vgs=0 | 30 mA |
Vds - Drain-Source Breakdown Voltage | 10 V |