JFETs JFET N-Channel (Dual) -20V Low Noise
Products specifications
Pd - Power Dissipation | 480 mW |
Vds - Drain-Source Breakdown Voltage | 10 V |
Configuration | Dual |
Transistor Polarity | N-Channel |
Packaging | Bulk |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Series | IF132 |
Drain-Source Current at Vgs=0 | 25 mA |
Vgs - Gate-Source Breakdown Voltage | - 20 V |
Id - Continuous Drain Current | 1 uA |