JFETs JFET N-Channel -25V Low Ciss
Products specifications
Transistor Polarity | N-Channel |
Vgs - Gate-Source Breakdown Voltage | - 25 V |
Configuration | Single |
Pd - Power Dissipation | 300 mW |
Packaging | Bulk |
Mounting Style | Through Hole |
Drain-Source Current at Vgs=0 | 10 mA |
Technology | Si |