JFETs JFET N-Channel -30V Low Noise
Products specifications
Transistor Polarity | N-Channel |
Configuration | Single |
Vgs - Gate-Source Breakdown Voltage | - 40 V |
Rds On - Drain-Source Resistance | 40 Ohms |
Technology | Si |
Drain-Source Current at Vgs=0 | 100 mA |
Mounting Style | Through Hole |
Packaging | Bulk |
Pd - Power Dissipation | 1.8 W |