JFETs JFET N-Channel -30V Low Noise
Products specifications
Packaging | Bulk |
Vgs - Gate-Source Breakdown Voltage | - 30 V |
Transistor Polarity | N-Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 25 Ohms |
Configuration | Single |
Pd - Power Dissipation | 1.8 W |
Series | 2N485 |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 500 pA |
Vds - Drain-Source Breakdown Voltage | 15 V |
Drain-Source Current at Vgs=0 | 50 mA |