JFETs JFET N-Channel -30V Low Ciss
Lead Time: 40 Days
Products specifications
Pd - Power Dissipation | 300 mW |
Packaging | Bulk |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 15 V |
Vgs - Gate-Source Breakdown Voltage | - 30 V |
Series | 2N422 |
Id - Continuous Drain Current | 100 pA |
Transistor Polarity | N-Channel |
Drain-Source Current at Vgs=0 | 3 mA |
Mounting Style | Through Hole |
Configuration | Single |