JFETs JFET N-Channel -40V Low Ciss
Lead Time: 0 Days
Products specifications
Configuration | Single |
Pd - Power Dissipation | 300 mW |
Technology | Si |
Vgs - Gate-Source Breakdown Voltage | - 40 C |
Transistor Polarity | N-Channel |
Drain-Source Current at Vgs=0 | 0.24 mA |
Packaging | Bulk |
Mounting Style | Through Hole |