JFET JFET P-Channel 25V Low Noise
Products specifications
Configuration | Single |
Rds On - Drain-Source Resistance | 300 Ohms |
Technology | Si |
Packaging | Bulk |
Vgs - Gate-Source Breakdown Voltage | 25 V |
Pd - Power Dissipation | 300 mW |
Drain-Source Current at Vgs=0 | - 2 mA |
Transistor Polarity | P-Channel |
Mounting Style | Through Hole |