JFETs JFET P-Channel 30V Low Ciss
Lead Time: 21 Days
Products specifications
Technology | Si |
Vgs - Gate-Source Breakdown Voltage | - 30 V |
Series | 2N26 |
Packaging | Bulk |
Vds - Drain-Source Breakdown Voltage | - 10 V |
Configuration | Single |
Pd - Power Dissipation | 300 mW |
Id - Continuous Drain Current | 5 mA |
Drain-Source Current at Vgs=0 | - 10 mA |
Transistor Polarity | P-Channel |
Mounting Style | Through Hole |